KTC4076W [BL Galaxy Electrical]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
KTC4076W
型号: KTC4076W
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管
文件: 总3页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC4076W  
FEATURES  
Pb  
Lead-free  
z
z
z
Excellent HFE Linearity.  
Complementary to KTA2015  
Power dissipation.(PC=100mW)  
APPLICATIONS  
z
General purpose and switching application.  
SOT-323  
ORDERING INFORMATION  
Type No.  
Marking  
WO/WY  
Package Code  
SOT-323  
KTC4076W  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
VCBO  
35  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
30  
V
5
V
Collector Current -Continuous  
Collector Dissipation  
500  
100  
mA  
mW  
PC  
Junction and Storage Temperature  
Tj,Tstg  
-55~150  
Document number: BL/SSSTF049  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC4076W  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC=100μA,IE=0  
IC=1mA,IB=0  
MIN  
35  
30  
5
TYP MAX UNIT  
Collector-base breakdown voltage  
V
V
V
Collector-emitter breakdown  
voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IE=100μA,IC=0  
VCB=35V,IE=0  
0.1  
0.1  
240  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB=5V,IC=0  
VCE=1V,IC=100mA  
VCE=6V,IC=400mA  
70  
25  
DC current gain  
hFE  
Collector-emitter saturation voltage VCE(sat)  
IC=100mA, IB= 10mA  
VCE=6V, IC= 20mA  
0.1  
7.0  
0.25  
V
Transition frequency  
fT  
MHz  
VCB=6V, IE=0mA  
f=1MHz  
Collector output capacitance  
Cob  
pF  
CLASSIFICATION OF hFE(1)  
Range  
Marking  
O
Y
70-140  
120-240  
Document number: BL/SSSTF049  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC4076W  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-323  
SOT-323  
Dim  
A
Min  
1.8  
Max  
2.2  
B
1.15  
1.35  
C
D
E
1.0Typical  
0.15  
0.25  
1.2  
0.35  
0.40  
1.4  
G
H
J
0.02  
0.1  
0.1Typical  
K
2.1  
2.3  
All Dimensions in mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
KTC4076W  
SOT-323  
3000/Tape&Reel  
Document number: BL/SSSTF049  
Rev.A  
www.galaxycn.com  
3

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